unisonic technologies co., ltd 19n10 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2015 unisonic technologies co., ltd qw-r502-261.j 15.6a, 100v n-channel power mosfet ? description the utc 100v n-channel enhancement mode power field effect transistors (mosfet) are produced by utc?s planar stripe, dmos technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. they are suited for low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. ? features * r ds(on) < 0.1 ? @ v gs =10v, i d =7.8a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol
19n10 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-261.j ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 19n10l-t3p-t 19N10G-T3P-T to-3p g d s tube 19n10l-ta3-t 19n10g-ta3-t to-220 g d s tube 19n10l-tf3-t 19n10g-tf3-t to-220f g d s tube 19n10l-tf1-t 19n10g-tf1-t to-220f1 g d s tube 19n10l-tm3-t 19n10g-tm3-t to-251 g d s tube 19n10l-tms-t 19n10g-tms-t to-251s g d s tube 19n10l-tms2-t 19n10g-tms2-t to-251s2 g d s tube 19n10l-tms4-t 19n10g-tms4-t to-251s4 g d s tube 19n10l-tn3-r 19n10g-tn3-r to-252 g d s tape reel 19n10l-tq2-r 19n10g-tq2-r to-263 g d s tape reel 19n10l-tq2-t 19n10g-tq2-t to-263 g d s tube note: pin assignment: g: gate d: drain s: source ? marking
19n10 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-261.j ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 100 v gate-source voltage v gss 25 v t c =25c 15.6 a continuous drain current t c =100c i d 9.8 a pulsed drain current (note 2) i dm 62.4 a avalanche current (note 2) i ar 15.6 a single pulsed avalanche energy (note 3) e as 220 mj repetitive avalanche energy (note 2) e ar 5.0 mj peak diode recovery dv/dt (note 4) dv/dt 6.0 v/ns to-220/to-263 62.5 w to-220f/to-220f1 38 w to-251/to-251s to-251s2/to-251s4 to-252 50 w power dissipation to-3p p d 178 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) l=1.8mh, i as =15.6a, v dd =25v, r g =25 ? , starting t j =25c i sd 19a, di/dt 300a/s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit to-220/to-220f to-220f1/to-263 62.5 c/w to-251/to-251s to-251s2/to-251s4 to-252 50 c/w junction to ambient to-3p ja 40 c/w to-220/to-263 2.0 c/w to-220f/to-220f1 3.95 c/w to-251/to-251s to-251s2/to-251s4 to-252 2.5 c/w junction to case to-3p jc 0.7 c/w
19n10 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-261.j ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 100 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250a, referenced to 25c 0.1 v/c v ds =100v, v gs =0v 1 a drain-source leakage current i dss v ds =100v, t j =125c 10 a forward v gs =25v, v ds =0v 100 gate-source leakage current reverse i gss v gs =-25v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =7.8a 0.078 0.1 ? forward transconductance g fs v ds =40v, i d =7.8a (note 1) 11 s dynamic parameters input capacitance c iss 600 780 pf output capacitance c oss 165 215 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 32 40 pf switching parameters total gate charge q g 19 25 nc gate source charge q gs 6 nc gate drain charge q gd v ds =50v, i d =1.3a, v gs =10v (note 1, 2) 6 nc turn-on delay time t d(on) 45 60 ns turn-on rise time t r 70 90 ns turn-off delay time t d(off) 165 250 ns turn-off fall-time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 78 90 ns source- drain diode ratings and characteristics diode forward voltage v sd v gs =0v, i s =15.6a 1.5 v maximum body-diode continuous current i s 15.6 a maximum pulsed drain-source diode forward current i sm 62.4 a body diode reverse recovery time t rr 78 ns body diode reverse recovery charge q rr v gs = 0v, i s =19a, di f /dt=100a/ s (note 1) 200 nc note: 1. pulse test : pulse width 300s, duty cycle 2% note: 2. essentially independent of operating temperature
19n10 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-261.j ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + fig. 1a peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period fig. 1b peak diode recovery dv/dt waveforms
19n10 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-261.j ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f fig. 2a switching test circuit fig. 2b switching waveforms 10v charge q gs q gd q g v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
19n10 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-261.j ? typical characteristics square wave pulse duration, t 1 (sec) transient thermal response curve 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 notes: 1. jc (t) = 2.5 c /w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 10 1 10 0 10 -1 drain-source voltage, v ds (v) 10 2 10 1 10 0 safe operating area notes: 1. t j =25 c 2. t j =150 c 3. single pulse operation in this area is limited by r ds(on) 10 2 dc 10ms 1ms 100s 10s
19n10 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-261.j ? typical characteristics(cont.) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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